Metal-organic Chemical Vapor Deposition Facility

Applications :

Be used for coating on solar cell , semiconductor film and other differents thin film .

Specification :

• Ultimate vacuum : 6.6×10^-4 Pa
• Leakage rate of gas supply system : <10^-8Pa·L/S
• Sample heating temperature : 1200°C
• Homogeneity of sample : ±5% in redius 50mm range
• Sample under vacuum conditions : Up and down 20mm , autorotation 0-600C/min Adjustable

Advantage :

• High film forming speed
• As equipped with specially designed showerhead gas source, the reactant gas was well distributed on the surface of sample , the high quality different thin film or coating on solar cell formed .

Gas Circuits System: